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D17P137ACT Datasheet


www.DataSheet4U.com µPD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A © 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric f.

NEC
D17P137ACT.pdf

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NEC D17P137ACT Datasheet
www.DataSheet4U.com µPD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A © 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions www.DataSheet4U.com need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS de.





www.DataSheet4U.com µPD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A © 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric f.

NEC
D17P137ACT.pdf

Preview

Preview
Preview

NEC D17P137ACT Datasheet
www.DataSheet4U.com µPD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A © 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions www.DataSheet4U.com need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS de.





UPD17P137ACT

www.DataSheet4U.com µPD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A © 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions www.DataSheet4U.com need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS de.



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