2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
!F...
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
!Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. !External dimensions (Units : mm)
2SD2195
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
1.5 0.4
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current 2SD2195 Collector power dissipation 2SD1980 2SD1867 2SD2398 Junction temperature
Storage temperature
ROHM : MPT3 EIAJ : SC-62
Unit V V V A(DC) A(Pulse) ∗1 W ∗2 W(Tc=25°C) W ∗3
1.0 0.5
Symbol VCBO VCEO VEBO IC
(3) (2) (1)
2.3
Limits 100 100 6 2 3 2 1 10 1 2 20 150
−55 ∼ +150
2SD1980
0.75
0.4
5.5
1.5
0.9
0.9
0.65 2.3
PC
5.1 6.5
C0.5
1.5
0.5
1.5 2.5 9.5
Tj
Tstg
°C °C
∗ 1 Single pulse Pw=100ms ∗ 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. ∗ 3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
ROHM : CPT3 EIAJ : SC-63
2SD1867
2.3
W(Tc=25°C)
0.8Min.
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
6.8
2.5
!Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
∗ Denotes hFE
2SD2195 2SD1980 2SD1867 2SD2398 MPT3 CPT3 ATV TO-220FN 1k ∼ 10k 1k ∼ 10k 1k ∼ 10k 1k ∼ 10k DP ∗ − − − T100 TL TV2 −...
