2SD1911
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a pl...
2SD1911
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
High
voltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PFM
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Diode forward
voltage Fall time
Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4.5A ICsat = 4.0A; f = 16KHz
4.5 1.6
MAX 1500 600 5 10 50 5 2.0 1.0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
Tmb 25
MIN -65 -
MAX 1500 600 5 10
50 150 150
UNIT V V A A A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf
PARAMETER Collector cut-off current
Collector-emitter sustaining
voltage Collector-emitter saturation
voltages Base-emitter satuation
voltage DC current gain Diode forward
voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz
Switching ...