TetraFET
D2007UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE S...
TetraFET
D2007UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS
Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010
DA
PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 PIN 2 PIN 4 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 DRAIN GATE Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800
LOW NOISE HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS from DC to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown
Voltage Gate – Source Breakdown
Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A –65 to 150°C 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 6/98
D2007UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance ...