TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: ...
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
Low saturation
voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
60 60 7 3 0.5 2.0 25 150 −55 to 150
V V V A A
W
°C °C
JEDEC JEITA
― ―
Note 1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current gain
Collector-emitter saturation
voltage Base-emitt...