TetraFET
D2015UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C O K
H
I
E
F
J
L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND
G (4 PLS) N D
(2 PLS)
M
SOT 171
PIN 1 PIN 3 PIN 5 DIM A B C D E F G H I J K L M N O SOURCE GATE SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13 7.11 PIN 2 PIN 4 PIN 6 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.
METAL GATE RF SILICON FET
TetraFET
D2015UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C O K
H
I
E
F
J
L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND
G (4 PLS) N D
(2 PLS)
M
SOT 171
PIN 1 PIN 3 PIN 5 DIM A B C D E F G H I J K L M N O SOURCE GATE SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13 7.11 PIN 2 PIN 4 PIN 6 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.05 MAX SOURCE DRAIN SOURCE Tol. 0.001 0.003 0.003 0.05 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.005 0.003 0.002 MAX
APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM
Inches 0.430 0.230 0.100 0.130 dia 0.360 0.120 0.079 0.041 0.725 0.975 0.108 0.360 0.165 0.005 0.280
APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A –65 to 150°C 200°C
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