D2025UK

TetraFET D2025UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 A 3 B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 400MHz SINGLE ENDED FEATURES D E F SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS DW PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE G H LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM DIM A B C D E F G H mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67 Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF APPLICATIONS VHF/UHF COMMUNICATIONS from DC to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 17.5W 65V ±20V 1A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5855 Issue 1 D2025UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA ...