D2027

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V wwwVEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 8A 1.75 W 30 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 40V; IE=0 100 μA IEBO Emitter Cutoff Current i.cnhFE-1 DC Current Gain .iscsemhFE-2 DC Current Gain wwwCOB Output Capacit...