D2028

Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features · With Zener diode (11±3V) between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SD2028] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions With Zener diode (11±3V) With Zener diode (11±3V) 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.8 1.1 Ratings 8 8 5 0.7 1.5 200 150 –55 to +150 Unit V V V A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=6V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=2V, IC=50mA VCB=5V, f=1MHz 200* 100 200 12 MHz pF Conditions Ratings min typ max 100 100 900* Unit nA nA * : The 2SD2028 is classified by 50mA hFE as follows : 200 (Note) Marking : LT hFE rank : 6, 7, 8 6 400 300 7 600 450 8 900 Continued on next page. Any and all SANYO products described or contained herein ...