DatasheetsPDF.com

D2053 Datasheet

Part Number D2053
Manufacturers SavantIC
Logo SavantIC
Description 2SD2053
Datasheet D2053 DatasheetD2053 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2053 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICP Collector-emitter voltag.

  D2053   D2053






Part Number D2059
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Power Transistors
Datasheet D2053 DatasheetD2059 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2059 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complement to type 2SB1367 ·Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ·Collector power dissipation: PC=30W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC T.

  D2053   D2053







Part Number D2058
Manufacturers Savant
Logo Savant
Description 2SD2058
Datasheet D2053 DatasheetD2058 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VC.

  D2053   D2053







Part Number D2058
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description KSD2058
Datasheet D2053 DatasheetD2058 Datasheet (PDF)

KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted.

  D2053   D2053







Part Number D2057
Manufacturers Panasonic
Logo Panasonic
Description 2SD2057
Datasheet D2053 DatasheetD2057 Datasheet (PDF)

Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm s Features q Incorporating a built-in damper diode q Reduction of a parts count and simplification of a circuit are al- lowed q High breakdown voltage with high reliability q High-speed switching q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to ba.

  D2053   D2053







Part Number D2054UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D2053 DatasheetD2054UK Datasheet (PDF)

TetraFET D2054UK METAL GATE RF SILICON FET MECHANICAL DATA B E D 8 1 7 6 3 4 2 C R A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM I P H G DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 6 Gate 2 PIN 7 Gate 1 PIN 4 Source (Common) PIN 8 Source .

  D2053   D2053







2SD2053

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2053 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICP Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 150 150 5 9 15 2.5 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2053 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A VBE Base-emitter on voltage IC=7A;VCE=5V ICBO Collector cut-off current VCB=150V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=20mA ; VCE=5V hFE-2 DC current gain IC=1A ; VCE=5V hFE-3 DC current gain IC=7A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V MIN TYP. MAX UNIT 150 V 2.0 V 1.8 V 50 µA 50 µA 20 60 200 15 20 MH.


2014-12-27 : AK2117    LLG2C821MELA25    C4308    LLG2C561MELZ25    LLG2C681MELZ30    LLG2C821MELZ35    D2053    IXFM10N90    IXFM12N90    C5002   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)