D2060

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2060 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current IB Base current PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 80 80 5 4 0.4 2.0 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2060 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A VBE Base-emitter on voltage IC=3A;VCE=5V ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V MIN TYP. MAX UNIT...