2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2088
Micro Motor Drive, Hammer D...
2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation
voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
60 ± 10
V
Collector-emitter
voltage
VCEO
60 ± 10
V
Emitter-base
voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB
0.5 A
JEDEC
TO-92MOD
Collector power dissipation
PC
0.9 W
JEITA
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1 2009-12-21
E...