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D2141 Datasheet

Part Number D2141
Manufacturers Allegro Micro Systems
Logo Allegro Micro Systems
Description 2SD2141
Datasheet D2141 DatasheetD2141 Datasheet (PDF)

Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2141 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF 13.0min B (1.5k Ω)(100 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2141 380±50 380±50.

  D2141   D2141






Part Number D2148H
Manufacturers Intel
Logo Intel
Description High Speed 1024 x 4-Bit Static RAM
Datasheet D2141 DatasheetD2148H Datasheet (PDF)

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  D2141   D2141







Part Number D2148
Manufacturers General Electric Solid State
Logo General Electric Solid State
Description 4K-Bit HMOS Static RAM
Datasheet D2141 DatasheetD2148 Datasheet (PDF)

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  D2141   D2141







Part Number D2147H
Manufacturers Intel
Logo Intel
Description High Speed 4096 x 1 Bit Static RAM
Datasheet D2141 DatasheetD2147H Datasheet (PDF)

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  D2141   D2141







Part Number D2144
Manufacturers Rohm
Logo Rohm
Description 2SD2144
Datasheet D2141 DatasheetD2144 Datasheet (PDF)

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) www.DataSheet4U.net 232 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2114K / 2SD2144S FElectrical characteristics (Ta = 25_C) FP.

  D2141   D2141







Part Number D2143
Manufacturers Rohm
Logo Rohm
Description 2SD2143
Datasheet D2141 DatasheetD2143 Datasheet (PDF)

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 2SD2212 1.5 0.4 4.0 1.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 !Absolute maximum.

  D2141   D2141







2SD2141

Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2141 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF 13.0min B (1.5k Ω)(100 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2141 380±50 380±50 6 6(Pulse10) 1 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Ignitor, Driver for Solenoid and Motor, and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 www.DataSheet4U.com 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 0 15 m V CE ( sat ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 120mA A 90mA 60mA A 20m mA 18 Collector Current I C (A) Collector Current I C (A) 2mA 2 Collector Current I C (A) 4mA 5 p) Tem ase (C 1A 5˚C C (C 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1.0 Base-Emittor Voltage V B E (V) –30˚C 25˚ 12 (Case as 1 eT 3A Temp em 5A p) ) I B =1 mA I C =7A 5 2.0 2.4 Collector-Emitter Voltage V C E (V) Base Current I B (.


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