Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current t...
Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE. q Low collector to emitter saturation
voltage VCE(sat). q High emitter to base
voltage VEBO. q Low noise
voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 50 40 15 100 50 125 125
–55 ~ +125
Unit V V V mA mA mW ˚C ˚C
0.2–+00..015
Unit: mm
1.6±0.15 0.4 0.8±0.1 0.4
1 3
2
1.6±0.1 1.0±0.1 0.5 0.5
0.15–+00..015
0.75±0.15 0.45±0.1 0.3
0 to 0.1
0.2±0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC–75 SS–Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency
ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT
VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz
50 40 15 400
100 nA
1 µA
V
V
V
2000
0.05 0.2
V
120 MHz
*hFE Rank classification
Rank
R
S
T
hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000
1
Collector output capacitance Cob...