www.DataSheet4U.com
Power Transistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplificati...
www.DataSheet4U.com
Power Transistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1548 and 2SB1548A
Unit: mm
s Features
q q q
15.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation
voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60 80 60 80 6 5 3 25 2 150 –55 to +150 Unit
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD2374 2SD2374A 2SD2374 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
φ3.2±0.1
13.7±0.2 4.2±0.2
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5
2.6±0.1
V
0.55±0.15
emitter
voltage 2SD2374A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
1 2
V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TO–220D Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Base to emitter
voltage Collector to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*
Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A...