D2457

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features q High collector to emitter voltage VCEO. q Large collector power dissipation PC. q Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3A Collector current IC 1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 4.5±0.1 1.6±0.2 1.5±0.1 2.5±0.1 0.4max. +0.25 4.0–0.20 2.6±0.1 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 321 marking +0.1 1.0–0.2 0.4±0.04 1:Base 2:Colle...