D2504

Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification ■ Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg 15 10 10 5 9 750 150 −55 to +150 Note) *: t = 380 µs Unit V V V A A mW °C °C www.DataSheet4U.com 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 1 mA, IE = 0 IC = 10 µA, IB = 0 VCB = 10 V, IE = 0 VCE = 5 V, IB = 0 VEB = 5 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE =...