Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High forward c...
Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation
voltage VCE(sat) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base
voltage
Collector to emitter
voltage
Emitter to base
voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
80 80 6 5 3 20 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current Collector to emitter
voltage
Forward current transfer ratio
Base to emitter
voltage Collector to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
ICES ICE...