INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Coll...
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation
Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649
APPLICATIONS
·Designed for series regulator and general purpose
applications.
.iscsemi.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
wwwVCBO
Collector-Base
Voltage
150 V
VCEO Collector-Emitter
Voltage
150 V
VEBO
Emitter-Base
Voltage
5V
IC Collector Current-Continuous
15 A
IB Base Current-Continuous Collector Power Dissipation
PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature
1A 85 W 150 ℃ -55~150 ℃
isc Website:www.iscsemi.cn
www.DataSheet.in
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA, IB= 0
150
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 10A ,IB= 10mA
2.5 V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 10A ,IB= 10mA
3.0 V
ICBO Collector Cutoff current
VCB= 150V, IE= 0
0.1 mA
IEBO Emitter Cutoff current
VEB= 5V, IC= 0
0.1 mA
hFE DC Current Gain
IC= 10A; VCE= 4V
5000
COB Output Capacitance
i.cnfT Current-Gain—Bandwidth Product .iscsemSwitching Time...