2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
High-Power Switching Applications Hamm...
2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) Low saturation
voltage: VCE (sat) = 1.5 V (max)
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Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 95 110 ± 15 5 5 10 0.7 2.0 20 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ ≈ 150 Ω Emitter
1
2006-11-21
2SD2604
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off c...