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N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET
TYPE STD30NF06L
s s s s
STD30NF06L
...
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N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER
MOSFET
TYPE STD30NF06L
s s s s
STD30NF06L
VDSS 60 V
RDS(on) <0.028Ω
ID 35 A
s s
TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS
3 2 1
3 1
IPAK
DPAK
DESCRIPTION This Power
Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s MOTOR CONTROL, AUDIO
AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE
Symbol VDS VDGR VGS ID ID
m
ABSOLUTE MAXIMUM RATINGS
Parameter Value 60 60 ± 20 35 25 140 70 0.46 25 – 55 to 175
(1) ISD ≤ 38A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX.
Unit V V V A A A W W/°C V/ns °C
4U
Tj
eet
IDM (l) PTOT
Sh ata
dv/dt (1) Tstg
(q) Pulse width limited by safe operating area
ww
w.D
July 2002
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Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery
voltage slope Storage Tempe...