D371S45T
Fast Recovery Diode
FEATURES ·Full diffusion process,flat type ceramic tube package ·Double sides cooling,High...
D371S45T
Fast Recovery Diode
FEATURES ·Full diffusion process,flat type ceramic tube package ·Double sides cooling,High current ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power converters ·AC/DC switching ·Phase controlled rectifying
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VR
Repetitive Peak Reverse
Voltage
IF(AV)
Average Forward Current
IFSM
Surge Forward Current
TJ
Junction Temperature
Tstg
Storage Temperature Range
CONDITIONS
TC=85℃;f=50Hz tp=10ms
VALUE UNIT
4500
V
330
A
6000
A
-40~150
℃
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.4
UNIT ℃/W
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ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
VF
Forward
Voltage drop
IRRM
Instantaneous Reverse Current
trr
Reverse Recovery Time
D371S45T
Fast Recovery Diode
CONDITIONS
IF= 1200A, TJ= 25℃
VRM=VRRM IFM= 1000A,-di/dt=250A/µs; VR=1000V
MAX 3.9 100 4
UNIT V mA µs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous env...
