2SD400
TO-92MOD Transistor (NPN)
1
1. EMITTER
2
3
2. COLLECTOR
3. BASE
Features
Low-Frequency power Amp, Electr...
2SD400
TO-92MOD Transistor (NPN)
1
1. EMITTER
2
3
2. COLLECTOR
3. BASE
Features
Low-Frequency power Amp, Electronic Governor Applications
TO-92MOD
5.800 6.200
0.400 0.600
8.400 8.800
0.900 1.100
13.800 14.200
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 25 25 5 1 0.9 150
-55-150
Units V V V A W ℃ ℃
0.000 0.380
1.500 TYP 2.900 3.100
1.600
0.400 4.700 0.500 5.100
4.000
1.730 2.030
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage Base-emitter saturation
voltage Transition frequency Output Capacitance
Symbol
Test conditions
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10µA, IC=0
ICBO
VCB=20V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=2V, IC=50mA
hFE(2) VCE=2V, IC=1A
VCE(sat) IC=500mA, IB=50mA
VBE(sat) IC=500mA, IB=50mA
fT
VCE=10V, IC=50mA
Cob VCB=10V, f=1MHz
MIN TYP MAX UNIT
25
V
25
V
5
V
1
µA
1
µA
60
560
30
0.3 V
1.2 V
180
MHz
15
pF
CLASSIFICATION OF hFE(1)
Rank
D
Range
60-120
E 100-200
F 160-320
G 280-560
Typical Characteri...