SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW40G65C5
Final Datasheet
Rev. 2.2, 2013-01-1...
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW40G65C5
Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this
voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown
voltage tested at 88 mA2) Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply
...