D40C7

isc Silicon NPN Darlington Power Transistor D40C7 DESCRIPTION ·High DC Current Gain- : hFE = 10K-70K ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 13 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 6.25 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 20 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ,IB= 0.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA ,IB= 0.5mA ICBO Collector Cutoff Current VCB=50V, IE= 0 IEBO Emitter Cutoff Current VEB= 13V; IC= 0 hFE DC Current Gain IC= 200mA ; VCE= 5V D40C7 MIN MAX UNIT 50 V 1.5 V 2 V 20 µA 100 nA 10K 70K NOTICE： ISC reserves the rights to make changes of the co...