D428

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD428 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 www.DataSheet.co.kr V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature -7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD428 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V COB Output Capacitance I = 0; V = 10V; f= 1MHzE CBw w w . D a t a S h e e t ...