isc Silicon NPN Power Transistors
DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Co...
isc Silicon NPN Power Transistors
DESCRIPTION ·Low Saturation
Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C2 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for various specific and general purpose application
such as: output and driver stages of
amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
40
V
30
V
5
V
4
A
6
A
1
A
30
W
150
℃
-55~150 ℃
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
4.2 ℃/W
D44C2
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
D44C2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation
Voltage IC= 1A; IB= 50mA
0.5
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 1A; IB= 100mA
1.3
V
ICES
Collector Cutoff Current
VCE= 40V, VBE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V...
