D45C12

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification D45C12 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C12 APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -1 A 30 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification D45C12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A ;IB= -100mA ICES Collector Cutoff Current VCE= -90V, VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 V -1.3 V -10 μA -100 μA hFE-1 DC Curren...