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D45C8 Datasheet

Part Number D45C8
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Power Amplifier
Datasheet D45C8 DatasheetD45C8 Datasheet (PDF)

D45C8 — PNP Power Amplifier D45C8 PNP Power Amplifier • Sourced from process 5P. January 2010 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -60 -4.0 -55 to +150 Units V A °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics .

  D45C8   D45C8






Part Number D45C8
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet D45C8 DatasheetD45C8 Datasheet (PDF)

isc Silicon PNP Power Transistors D45C8 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C8 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters .

  D45C8   D45C8







Part Number D45C8
Manufacturers GE
Logo GE
Description PNP POWER TRANSISTORS
Datasheet D45C8 DatasheetD45C8 Datasheet (PDF)

PNP POWER TRANSISTORS COMPLEMENTARY TO THE D44C SERIES D45C Series -30 - -80 VOLTS -4 AMP, 30 WATTS The General Electric D45C is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. Features: • PNP complement to D44C NPN • Very Low collector saturation voltage.

  D45C8   D45C8







PNP Power Amplifier

D45C8 — PNP Power Amplifier D45C8 PNP Power Amplifier • Sourced from process 5P. January 2010 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -60 -4.0 -55 to +150 Units V A °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 ICES Collector-Emitter-(Base)Short VCE = -70V, IE = 0 ICEO Collector-Emitter-(Base)Open VCE = -55V, IE = 0 IEBO Emitter-Base Current VEB = -5.0V, IB = 0 On Characteristics hFE DC Current Gain VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -2.0A IC = -1.0A, IB = -50mA IC = -1.0A, IB = -100mA Cob Output Capacitance VCB = -10V, f = 1.0MHz fT Current Gain Bandwidth Product IC = -20mA, VCE = -4.0V tON td, Delay Time tr, Rise Time tOFF ts, Storage Time tf, Fall Time IC = -1.0A, IB1 = IB2 = -0.1A VCC = -30V, tp = 25μs Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Min. -60 40 20 32 Typ. 59 502 474 59 Max. 60 480 2.1 62.5 Max. .


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