D45H11T3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11T3 Spec. No. : C607T3 Issued Date : 2020.01.20 Revised Date : Page No. : 1/5 Features  Low VCE(sat)  High BVCEO  Excellent current gain characteristics  RoHS compliant package  Pb-free lead-free and halogen-free package Symbol D45H11J3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device D45H11T3-0-BL-G Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name D45H11T3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C607T3 Issued Date : 2020.01.20 Revised Date : Page No. : 2/5 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits -80 -80 -5 -8 -16 (Note 1) 1.75 (Note 2) 20 71.4 (Note 2) 6.25 150 -55~+150 Unit V V V A W C/W C/W C C Cha...