D45VH7

isc Silicon PNP Power Transistors D45VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D45VH 1 -50 VCEV Collector-Emitter Voltage D45VH 4 -70 V D45VH 7 -80 D45VH 10 -100 D45VH 1 -30 VCEO Collector-Emitter Voltage D45VH 4 -45 V D45VH 7 -60 D45VH 10 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -20 A 83 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D45VH 1 -30 VCEO(SUS) Collector-Emitter Sustaining Voltage D45VH 4 D45VH 7 D45VH 10 IC= -25mA ;IB= 0 -45 V -60 -80 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A -1....