D478

AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 100V 11A < 140mΩ < 152mΩ Top View TO252 DPAK Bottom View D D Top View TO251A IPAK Bottom View D S G G S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM 11 8 24 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR 2.5 2 10 5 TC=25°C Power Dissipation B TC=100°C PD 45 23 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17 55 2.7 Max 25 60 3.3 G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1: Nov. 2011 www.aosmd.com Page 1 of 6 AOD478/AOI478 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions...