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D5850
Silicon NPN transistor epitaxial type D5850
[ Applications ] General purpose transistors Medium...
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D5850
Silicon NPN transistor epitaxial type D5850
[ Applications ] General purpose transistors Medium power amplifire and switching
[ Feature ] High collector-emitter beak-down
voltage BVCEO= 80V High emitter-base break-down
voltage BVEBO= 8V Low collector saturation
voltage VCE(sat)= 0.14V (Typ.) at IC= 500mA, IB= 50mA Complimentary pair with phenitec P/N B5850
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol
Collector-base
voltage
VCBO
Collector-emitter
voltage
VCEO
Emitter-base
voltage
VEBO
Collector current
IC
Junction temperature
Tj
Storage temperature
Tstg
Maximum ratings 80 80 8 700 150
-55 to 150
Unit V V V mA C C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown
voltage
BVCBO 80
-
- V IC= 50uA, IE= 0A
Collector-emitter breakdown
voltage
BVCEO 80
-
- V IC= 2mA, IB= 0A
Emitter-base breakdown
voltage
BVEBO 8 - - V IE= 50uA, IC= 0A
Collector cut-off cu...
