Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2S...
Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB621 and 2SB621A
s Features
q Large collector power dissipation PC. q Low collector to emitter saturation
voltage VCE(sat).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SD592 base
voltage 2SD592A Collector to 2SD592 emitter
voltage 2SD592A Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
VCBO
VCEO
VEBO ICP IC PC Tj Tstg
Ratings 30 60 25 50 5 1.5 1 750 150
–55 ~ +150
Unit
V
V
V A A mW ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base 2SD592
voltage
2SD592A
Symbol ICBO
VCBO
Conditions VCB = 20V, IE = 0
IC = 10µA, IE = 0
min typ max Unit 0.1 µA
30 V
60
Collector to emitter 2SD592
voltage
2SD592A
Emitter to base
voltage
Forward current transfer ratio
Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
VCEO
VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob
IC = 2mA, IB = 0
25 50
V
IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2
5 85 160 340 50
0.2 0.4 0.85 1.2
V
V V
VCB = 10V, IE = –50mA, f = 2...