DatasheetsPDF.com

D5N50 Datasheet

Part Number D5N50
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 5A N-Channel MOSFET
Datasheet D5N50 DatasheetD5N50 Datasheet (PDF)

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 600V@150℃ .

  D5N50   D5N50






Part Number D5N50F
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet D5N50 DatasheetD5N50F Datasheet (PDF)

FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been espe.

  D5N50   D5N50







5A N-Channel MOSFET

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 600V@150℃ 5A < 1.6Ω Top View TO252 DPAK Bottom View D D S G G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy H ID IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 500 ±30 5 3.1 17 2.8 118 235 5 104 0.83 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 43 1 Maximum 55 0.5 1.2 D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev0: June 2010 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD5N50 Electrical Characteristics (T.


2016-08-28 : MAX2609    CAT4016    CAV4016    CAT4016W    CAT4016Y    CS150N03A8    MAX2607    D882    D882    D882   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)