D5N50F

FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A Low gate charge ( Typ. 11nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. D GD S D-PAK MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 2) (Note 1) (Note 1) (Note...