D5NM50

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 STD5NM50-1 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A n TYPICAL RDS(on) = 0.7Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED n LOW INPUT CAPACITANCE AND GATE CHARGE n LOW GATE INPUT RESISTANCE n TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. 3 1 DPAK TO-252 3 2 1 IPAK TO-251 (Add Suffix “-1”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VDGR VGS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM (l) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ...