STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STD5NM50 STD5NM...
STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power
MOSFET
TYPE
VDSS
RDS(on)
ID
STD5NM50 STD5NM50-1
500V 500V
<0.8Ω <0.8Ω
7.5 A 7.5 A
n TYPICAL RDS(on) = 0.7Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED n LOW INPUT CAPACITANCE AND GATE
CHARGE n LOW GATE INPUT RESISTANCE n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary
MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high
voltage converters allowing system miniaturization and higher efficiencies.
3 1
DPAK TO-252
3 2 1
IPAK TO-251 (Add Suffix “-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS VDGR VGS
Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery
voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
...