Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency P...
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown
voltage VCEO 100/120V, High current 1A. · Low saturation
voltage, excellent h FE linearity.
Package Dimensions
unit:mm 2009B
[2SB631, 631K/2SD600, 600K]
( ) : 2SB631, 631K
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pl arameter CV ollector-to-Base
Voltage CV ollector-to-Emitter
Voltage EV mitter-to-Base
Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C C0 ondition 2K SB631, D60 (0 –)100 (0 –)100
2t SB631K, D600 (V –)12 (V –)12 (V –)5 (A –)1 (A –)2 1W
Uni
Tc=25˚C
T Tst
8W 150 –55 to +150
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Pl arameter CV ollector-to-Base Breakdown
Voltage CV ollector-to-Emitter Brakdown
Voltage EV mitter-to-Base Breakdown
Voltage CI ollector Cutoff Current EI mitter Cutoff Current Ss ymbo (BR)CBO IC=(–)10µA, IE=0 (BR)CEO IC=(–)1mA, RBE=∞ (BR)EBO CBO EBO IE=(–)10µA, IC=5 0 VCB=(–)50V, IE=1 0 VEB=(–)4V, IC=1 0 Condition B0 631, D600 B0 631K, D600K B0 631, D600 B0 631K, D600K Ratings mp in (V –)10 (V –)12 (V –)10 (V –)12 (V –) (A –) (A –) µ µ tx y ma Unit
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit...