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D718 Datasheet

Part Number D718
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Power Transistors
Datasheet D718 DatasheetD718 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC IB PT Tj Tstg Collector-base voltage Collector.

  D718   D718






Part Number D718
Manufacturers UTC
Logo UTC
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet D718 DatasheetD718 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION 1  FEATURES * Recommended for 45~50W Audio Frequency *Amplifier Output Stage. * Complementary to 2SB688. TO-247 1 TO-3P  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD718L-x-T47-T 2SD718G-x-T47-T TO-247 2SD718L-x-T3P-T 2SD718G-x-T3P-T TO-3P Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tube.

  D718   D718







Silicon NPN Power Transistors

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC IB PT Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 120 120 5 8 0.8 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Base-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz MIN TYP. MAX UNIT 120 V 2.5 V 1.5 V 10 µA 10 µA 55 160 12 MHz 170 pF hFE Classifications RO 55-110 80-160 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SD718 .


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