D726

INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 80 5 V V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 2.0 V 1.5 V 0.1 mA hFE-1 DC Current Gain i.cnhFE-2 DC Current Gain .iscsemCOB Collector Output Capacitance wwwfT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V IC= 0.1A; VCE= 5V IE= 0; VCB= 20V; f= 1MHz IC= 0.5A; VCE= 5V 60 35 40 10 ‹ hFE-1 Classifications BC 200 pF MHz 60-120 100-200 isc Website：www.iscs...