INCHANGE Semiconductor
isc Silicon NPNPower Transistor
isc Product Specification
2SD726
DESCRIPTION ·Collector-Emitter...
INCHANGE Semiconductor
isc Silicon NPNPower Transistor
isc Product Specification
2SD726
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE UNIT
.iscsemVCBO Collector-Base
Voltage
100 V
wwwVCEO Collector-Emitter
Voltage
80 V
VEBO Emitter-Base
Voltage
5V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ Junction Temperature
8A 40 W 150 ℃
Tstg Storage Temperature Range
-45~150 ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPNPower Transistor
isc Product Specification
2SD726
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 50mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 10μA; IC= 0
80 5
V V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On
Voltage
IC= 1A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
2.0 V 1.5 V 0.1 mA
hFE-1
DC Current Gain
i.cnhFE-2
DC Current Gain
.iscsemCOB Collector Output Capacitance
wwwfT Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V IC= 0.1A; VCE= 5V IE= 0; VCB= 20V; f= 1MHz IC= 0.5A; VCE= 5V
60 35
40 10
hFE-1 Classifications
BC
200
pF MHz
60-120 100-200
isc Website:www.iscs...