D756

2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD755 100 100 5 50 750 150 –55 to +150 2SD756 120 120 5 50 750 150 –55 to +150 2SD756A 140 140 5 50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SD755 2SD756 2SD756A Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage Collector to base breakdown voltage V(BR)CEO 100 — — 120 — — 140 — — V IC = 1 mA, RBE = ∞ V(BR)CBO 100 — — 120 — — 140 — — V IC = 10 µA, IE = 0 Collector cutoff current ICBO DC current transfer ratio hFE1*1 —— 250 — 0.5 — — 1200 250 — 0.5 — — 800 250 — 0.5 500 hFE2 125 — — 125 — — 125 — — Base to emitter voltage VBE — — 0.75 — 0.75 — — 0.75 Collector to emitter saturation voltage VCE(sat) — — 0.2 — — 0.2 — — 0.2 Gain bandwidth product fT — 350 — — 350 — — 350 — Collector output capacitance Cob — 1.6 — — 1.6 — — 1.6 — Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows. DE F µA VCB = 100 V, IE = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA V VCE = ...