D823

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) APPLICATIONS ·Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 6A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown V...