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FIELD EFFECT POWER TRANSISTOR
IRF730,731 D84DQ2,Q1
5.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.0 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching...
