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FIELD EFFECT POWER TRANSISTOR
IRF230,231 D86DN2,M2
9.0 AMPERES 200,150 VOLTS
ROS(ON} = 0.4 n
This series of N-C...
~D~[?~
FIELD EFFECT POWER TRANSISTOR
IRF230,231 D86DN2,M2
9.0 AMPERES 200,150 VOLTS
ROS(ON} = 0.4 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability,
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio
amplifiers and servo motors.
Features
Polysilicon gate - Improved stability and reliability
No secondary breakdown - Excellent ruggedness
Ultra-fast switching - Independent of temperature
Voltage controlled - High transconductance
Low input capacitance - Reduced drive requirement
Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE TO-204AA (TO-3)
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