DATA SHEET
NPN SILICON POWER TRANSISTOR
2SD882
NPN SILICON POWER TRANSISTOR
DESCRIPTION
The 2SD882 is NPN silicon tran...
DATA SHEET
NPN SILICON POWER TRANSISTOR
2SD882
NPN SILICON POWER TRANSISTOR
DESCRIPTION
The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier,
voltage regulator, DC-DC converter and relay driver.
FEATURES
Low saturation
voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A)
Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.
3.8 ±0.2
12.0 MAX.
PACKAGE DRAWING (Unit: mm)
8.5 MAX. 3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature Junction Temperature
−55 to +150°C 150°C Maximum
Maximum Power Dissipations
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Maximum
Voltages and Currents (TA = 25°C)
1.0 W 10 W
VCBO
Collector to Base
Voltage
40 V
VCEO VEBO
Collector to Emitter
Voltage Emitter to Base
Voltage
30 V 5.0 V
IC(DC)
Collector Current (DC)
IC(pulse)Note Collector Current (pulse)
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
3.0 A 7.0 A
12 TYP.
2.5 ±0.2 13.0 MIN.
0.55
+0.08 –0.05
0.8
+0.08 –0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter 2: Collector: connected to mounting plane 3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain DC Current Gain
hFE1 hFE2
VCE = 2.0 V, IC = 20 mANote VCE = 2.0 V, IC = 1.0 ANote
Gain Bandwidth Produ...