2SD970(K)
www.DataSheet4U.com
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary p...
2SD970(K)
www.DataSheet4U.com
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
2 kΩ (Typ)
200 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Ratings 120 120 7 8 12 40 150 –55 to +150
Unit V V V A A W °C °C
2SD970(K)
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 120 7 — — 1000 — — — — — — — Typ — — — — — — — — — 0.4 5.4 1.1 Max — — 100 10 20000 1.5 3.0 2.0 3.5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t stg tf
Maximum Collector Dissipation Curve 60 Collector power dissipation Pc ...