Transistors. D998 Datasheet

D998 Datasheet PDF


Part Number

D998

Description

Silicon NPN Power Transistors

Manufacture

Savantic

Total Page 4 Pages
PDF Download
Download D998 Datasheet PDF


D998 Datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specwifwiwc.aDattiaoShneet4U.com
2SD998
DESCRIPTION
·With TO-3PML package
·Complement to type 2SB778
APPLICATIONS
·High power amplifier applications
·Recommended for 45~50W audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
MAX
120
120
5
10
1.0
80
150
-55~150
UNIT
V
V
V
A
A
W

D998 Datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specwifwiwc.aDattiaoShneet4U.com
2SD998
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE Base-emitter on voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
IC=0.5A;VCE=5V
VCB=120V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=5V
COB Collector output capacitance
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
120 V
2.5 V
1.5 V
10 µA
10 µA
55 160
12 MHz
170 pF
hFE Classifications
RO
55-110
80-160
2


Features Datasheet pdf SavantIC Semiconductor Product Specific ation www.DataSheet4U.com Silicon NPN Power Transistors 2SD998 DESCRIPTION ·With TO-3PML package ·Complement to type 2SB778 APPLICATIONS ·High power amplifier applications ·Recommended fo r 45~50W audio frequency amplifier outp ut stage PINNING PIN 1 2 3 Base Collect or Emitter Fig.1 simplified outline (TO -3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO V CEO VEBO IC IB PC Tj Tstg PARAMETER Col lector-base voltage Collector-emitter v oltage Emitter-base voltage Collector c urrent Base current Collector dissipati on Junction temperature Storage tempera ture TC=25 CONDITIONS Open emitter Open base Open collector MAX 120 120 5 10 1 .0 80 150 -55~150 UNIT V V V A A W Sav antIC Semiconductor Product Specificat ion www.DataSheet4U.com Silicon NPN P ower Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Co llector-emitter breakdown voltage Colle ctor-emitter saturation voltage Base-emitter on voltage Collector c.
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