DA26101

Tentative DA26101 Silicon epitaxial planar type For high speed switching circuits Marking Symbol : A1 Package Code : ML2-N3-B Absolute Maximum Ratings　Ta = 25 °C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current *1 Junction temperature Storage temperature Note: 1. *1 t = 1 s DA26101 Total pages page Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 125 -55 to +125 Unit V V mA mA mA °C °C Pin name 1. Cathode 2. Anode Electrical Characteristics　Ta = 25 °C±3 °C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time *1 Symbol VF VR IR Ct trr Conditions IF = 100 mA IR = 100 μA VR = 80 V VR = 0 V , f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.25 x IR Min 80 Typ 0.92 Max 1.20 100 1.2 3 Unit V V nA pF ns Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1 trr test circuit www.DataSheet4U.com Irr = 0.25 × IR IF = 10 mA VR = 6 V Packing Embossed type (Thermo-compression sealing) : 10 000 pcs / reel 2010.4.7 2010.7.27 Prepared Revised Semiconductor Company, Panasonic Corporation ML2-N3-B Unit: mm 0.60 ±0.05 2 0.39 −0.03 +0.01 1 0.05 ±0.03 0.25 ±0.05 0.50 ±0.05 0.25 ±0.05 1.00 ±0.05 0.65 ±0.01 www.DataSheet4U.com 0.05 ±0.03 Request for your special attention and precautions in using the technical information and...