This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J001 (Tentative)
Silicon epitaxial planar type
For ba...
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J001 (Tentative)
Silicon epitaxial planar type
For band switching Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage Forward current Operating ambient temperature * Storage temperature Symbol VR IF Topr Tstg Rating 35 100 –25 to +85 –55 to +150 Unit V mA °C °C
Package
Code SMini2-F5-B Pin Name 1: Cathode 2: Anode
Note) *: Maximum ambient temperature during operation.
Marking Symbol: D1
Electrical Characteristics Ta = 25°C
Parameter Forward
voltage Reverse current Diode capacitance Forward dynamic resistance * Symbol VF IR CD rf IF = 100 mA VR = 33 V VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ Max 1.0 100 1.2 0.85 Unit V nA pF Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *: Measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
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Publication date: October 2009
ZKF00136AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J001
SMini2-F5-B
Unit: mm
1.25 ±0.10 0.35 ±0.05 2
0.13 −0.02
+0.05
0 to 0.05
1 0.50 ±0.05 0.4 ±0.1
5°
0.7 ±0.1
5°
www.DataSheet4U.com
2
ZKF00136AED
(0.15)
1.7 ±0.1
2.5 ±0.2
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this b...