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DA2J101 Datasheet

Part Number DA2J101
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Diode
Datasheet DA2J101 DatasheetDA2J101 Datasheet (PDF)

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J101 Silicon epitaxial planar type For high speed switching circuits  Features  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Small reverse current IR  Short reverse recovery time trr  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: A1  Absolute M.

  DA2J101   DA2J101






Part Number DA2J108
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Diode
Datasheet DA2J101 DatasheetDA2J108 Datasheet (PDF)

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J108 Silicon epitaxial planar type For small current recitification  Features  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: A2 Unit V V mA mA A °C °C  Absolute Maximum Rating.

  DA2J101   DA2J101







Part Number DA2J107
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Diode
Datasheet DA2J101 DatasheetDA2J107 Datasheet (PDF)

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J107 Silicon epitaxial planar type For speed switching circuits DA3X107K in SMini2 type package  Features  High reverse voltage VR  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbo.

  DA2J101   DA2J101







Part Number DA2J104
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Diode
Datasheet DA2J101 DatasheetDA2J104 Datasheet (PDF)

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J104 Silicon epitaxial planar type For high speed switching circuits  Features  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Small reverse current IR  Low terminal capacitance Ct  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: C1  Absolute Maxim.

  DA2J101   DA2J101







Part Number DA2J10100L
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type Switching Diode
Datasheet DA2J101 DatasheetDA2J10100L Datasheet (PDF)

DReovcisNioon. . T3 T4-EA-11488 DA2J10100L Silicon epitaxial planar type For high speed switching circuits  Features  Small reverse current IR  Short reverse recovery time trr  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: A1  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage VR Maximum peak reverse voltage VRM Forward current IF .

  DA2J101   DA2J101







Diode

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J101 Silicon epitaxial planar type For high speed switching circuits  Features  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Small reverse current IR  Short reverse recovery time trr  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: A1  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: 1 t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 –55 to +150 Unit V V mA mA mA °C °C  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IF = 100 mA IR = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 0.25 × IR 80 100 1.2 3 Conditions Min Typ 0.92 Max 1.20 Unit V V nA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tr 10% tp t IF Output Pulse trr t A VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ =.


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